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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV199DW FEATURES Power dissipation PCM: 0.2 W (Tamb=25) Multi-Chip DIODES SOT-363 Collector current IF : 200 mA Collector-base voltage VR : 85 V Operating and storage junction temperature range TJ,Tstg: -55 to +150 MARKING:K52 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) MIN 85 5 0.9 1.0 1.1 1.25 TYP MAX UNIT V nA Test conditions IR= 100A VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V f=1MHz Forward voltage VF V Junction capacitance Cj 2 pF IF=IR=10mA Reveres recovery time trr Irr=0.1IR RL=100 3 nS Typical Characteristics BAV199DW |
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